Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors
نویسندگان
چکیده
scale metal oxide semiconductor field effect transistors Karim Huet, Damien Querlioz, Wipa Chaisantikulwat, Jérôme Saint-Martin, Arnaud Bournel, Mireille Mouis, and Philippe Dollfus Institut d’Electronique Fondamentale (IEF), UMR CNRS, Univ. Paris Sud, Orsay 91405, France STMicroelectronics, 850 rue Jean Monnet, Crolles 38920, France Institut de Microélectronique, Electromagnétisme et Photonique Laboratoire d Hyperfréquences et Caractérisation (IMEP-LAHC), UMR CNRS-INPG-UJF/ENSERG, 3 parvis Louis Néel, Grenoble 38016, France
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